SELECTIVE COPPER CHEMICAL-VAPOR-DEPOSITION USING PD-ACTIVATED ORGANOSILANE FILMS

Conductive, adherent copper films-were deposited selectively on diamond subtrates using ligating aminosilane self-assembled films and a Pd-based catalyst, Copper chemical vapor deposition (CVD) was performed at 444-456 K in a cold-walled chamber using 4 x 10(-3) Pa of (hexafluoroacetylacetonato)-copper(I)-trimethylvinylsilane mixed 1:1 (v/v) with H-2 carrier gas. In the absence of the:Pd catalyst, only isolated copper particles deposited on hydrogenated or aminosilane-coated diamond. The Pd;catalyst enhanced selectivity for Cu deposition by a factor of 10(3) to 10(4). Copper patterns with feature sizes to 1 mu m were formed by lithographically patterning an aminosilane film on diamond using UV (193 nm) radiation and a contact mask prior to catalyst deposition and copper CVD. The Pd catalyst also enhanced Cu deposition on aminosilane-coated Si(100) and quartz substrates. Treating substrates with octadecylsilane or aminosilane self-assembled films without the bound Pd catalyst reduced copper deposition compared to Si(100), native oxide or hydrogenated diamond surfaces.