PLANAR, ION-IMPLANTED BIPOLAR-DEVICES IN GAAS

被引：13

作者：

VAIDYANATHAN, KV

JULLENS, RA

ANDERSON, CL

DUNLAP, HL

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 08期

关键词：

D O I：

10.1016/0038-1101(83)90031-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：717 / 721

页数：5

共 20 条

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[9] PROPERTIES OF BE-IMPLANTED PLANAR GAAS P-N-JUNCTIONS [J].

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VAIDYANATHAN, KV ;

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[10]

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