HIGH-THROUGHPUT HIGH-YIELD FABRICATION OF SELECTIVELY DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

PLOOG, K

FISCHER, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 20期

关键词：

D O I：

10.1063/1.96919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1392 / 1394

页数：3

共 13 条

[1] INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES [J].

CIRILLO, NC ;

SHUR, MS ;

ABROKWAH, JK .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :71-74

[2] ULTRA-HIGH-SPEED RING OSCILLATORS BASED ON SELF-ALIGNED-GATE MODULATION-DOPED N+-(AL,GA)AS/GAAS FETS [J].

CIRILLO, NC ;

ABROKWAH, JK ;

FRAASCH, AM ;

VOLD, PJ .

ELECTRONICS LETTERS, 1985, 21 (17) :772-773

[3] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J].

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

ETIENNE, P ;

LAVIRON, M ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1980, 16 (17) :667-668

[4]

FRONIUS H, 1986, JPN J APPL PHYS LETT, V25

[5]

HIYAMIZU S, 1985, 6TH INT C EL PROP 2

[6]

HIYAMIZU S, UNPUB SURF SCI

[7] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[8]

MIMURA T, UNPUB SURF SCI

[9]

MIMURA T, 1985, 2ND INT C MOD SEM ST, P521

[10] TWO-DIMENSIONAL ELECTRON-GAS AT NORMAL-ALGAAS/GAAS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY USING DIRECT-RADIATION SUBSTRATE HEATING [J].

OE, K ;

IMAMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (06) :779-780

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