SERIES-PARALLEL ASSOCIATION OF FETS FOR HIGH-GAIN AND HIGH-FREQUENCY APPLICATIONS

被引:145
作者
GALUPMONTORO, C
SCHNEIDER, MC
LOSS, IJB
机构
[1] Laboratório de Instrumentacão Eletrônica-Departamento de Engenhavia Eletrica, Universidade Federal de Santa Catarina-C. P., Florianópolis, SC, 476
关键词
D O I
10.1109/4.309905
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a simple approach in the design of composite field effect transistors with low output conductance. These transistors consist of the series association of two transistors, with the transistor connected to the drain terminal wider than the transistor connected to the source terminal. It is shown that this composite transistor has the same dc characteristics as a long-channel transistor of uniform width. A composite transistor has two main advantages over its ''dc equivalent'' transistor of uniform width: significant area savings and a higher cutoff frequency. The main application is low-voltage, high-frequency analog circuits. The proposed technique is particularly suited for analog design in gate arrays.
引用
收藏
页码:1094 / 1101
页数:8
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