GROWTH MECHANISMS AND THERMAL-STABILITY OF ION-BEAM-INDUCED EPITAXIAL PD2SI FILMS

[1] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[2] ANNEALING BEHAVIOR OF RADIATION DAMAGES IN METAL-SILICIDES [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 51 (3-4): : 253 - 256

[3] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124

[4] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 711 - 717

[5] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 23 - 24

[6] SEPARATE ESTIMATE OF CRYSTALLITE ORIENTATIONS AND SCATTERING CENTERS IN POLYCRYSTALS BY BACKSCATTERING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1686 - 1689

[7] ION-BEAM-INDUCED EPITAXY IN THE PD-SI SYSTEM [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 641 - 643

[8] ISHIWARA H, 1980, P S THIN FILM INTERF, V80, P159

[9] SIGURD D, 1973, THIN SOLID FILMS, V19, P319, DOI 10.1016/0040-6090(73)90068-0

[10] SUPERSATURATED METASTABLE AG-NI SOLID-SOLUTIONS FORMED BY ION-BEAM MIXING [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 389 - 392

[1] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[2] ANNEALING BEHAVIOR OF RADIATION DAMAGES IN METAL-SILICIDES [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 51 (3-4): : 253 - 256

[3] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124

[4] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 711 - 717

[5] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 23 - 24

[6] SEPARATE ESTIMATE OF CRYSTALLITE ORIENTATIONS AND SCATTERING CENTERS IN POLYCRYSTALS BY BACKSCATTERING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1686 - 1689

[7] ION-BEAM-INDUCED EPITAXY IN THE PD-SI SYSTEM [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 641 - 643

[8] ISHIWARA H, 1980, P S THIN FILM INTERF, V80, P159

[9] SIGURD D, 1973, THIN SOLID FILMS, V19, P319, DOI 10.1016/0040-6090(73)90068-0

[10] SUPERSATURATED METASTABLE AG-NI SOLID-SOLUTIONS FORMED BY ION-BEAM MIXING [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 389 - 392