STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE - AN INVESTIGATION BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

被引：6

作者：

OUSTRY, A

BERTY, J

CAUMONT, M

DAVID, MJ

ESCAUT, A

机构：

来源：

THIN SOLID FILMS | 1982年 / 97卷 / 04期

关键词：

D O I：

10.1016/0040-6090(82)90521-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：295 / 300

页数：6

共 16 条

[1]

ANDERKO K, 1953, Z METALLKD, V44, P307

[2]

BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[3] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J].

BUCKLEY, WD ;

MOSS, SC .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1331-&

[4]

CHERNS D, 1981, I PHYS C SER, V60, P409

[5] STUDY OF PD2SI FILMS ON SILICON USING AUGER-ELECTRON SPECTROSCOPY [J].

FERTIG, DJ ;

ROBINSON, GY .

SOLID-STATE ELECTRONICS, 1976, 19 (05) :407-413

[6] REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE [J].

FREEOUF, JL ;

RUBLOFF, GW ;

HO, PS ;

KUAN, TS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :916-919

[7] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].

FREEOUF, JL ;

RUBLOFF, GW ;

HO, PS ;

KUAN, TS .

PHYSICAL REVIEW LETTERS, 1979, 43 (24) :1836-1839

[8] STOICHIOMETRIC AND STRUCTURAL ORIGIN OF ELECTRONIC STATES AT THE PD2SI-SI INTERFACE [J].

HO, PS ;

SCHMID, PE ;

FOLL, H .

PHYSICAL REVIEW LETTERS, 1981, 46 (12) :782-785

[9] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J].

HO, PS ;

TAN, TY ;

LEWIS, JE ;

RUBLOFF, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1120-1124

[10] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON [J].

ISHIWARA, H ;

HIKOSAKA, K ;

NAGATOMO, M ;

FURUKAWA, S .

SURFACE SCIENCE, 1979, 86 (JUL) :711-717

← 1 2 →