A COMPARATIVE-STUDY OF THE INTERACTION KINETICS OF AS2 AND AS4 MOLECULES WITH GA-RICH GAAS (001) SURFACES

被引：57

作者：

GARCIA, JC ^{[1
]}

NERI, C ^{[1
]}

MASSIES, J ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90169-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：511 / 518

页数：8

共 26 条

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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1596 - 1598
[9] DETERMINATION OF THE MICROSCOPIC QUALITY OF INGAAS-INALAS INTERFACES BY PHOTOLUMINESCENCE - ROLE OF INTERRUPTED MOLECULAR-BEAM EPITAXIAL-GROWTH
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