DIMER ARSENIC SOURCE USING A HIGH-EFFICIENCY CATALYTIC CRACKING OVEN FOR MOLECULAR-BEAM EPITAXY

被引：24

作者：

GARCIA, JC ^{[1
]}

BARSKI, A ^{[1
]}

CONTOUR, JP ^{[1
]}

MASSIES, J ^{[1
]}

机构：

[1] SOPHIA ANTIPOLIS,CNRS,PHYS SOLID & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 08期

关键词：

D O I：

10.1063/1.98987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：593 / 595

页数：3

共 10 条

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[2] FARROW RFC, 1982, 2ND INT S MOL BEAM E, P169
[3] MOLECULAR-BEAM EPITAXY OF IN0.53GA0.47AS AND INP ON INP BY USING CRACKER CELLS AND GAS CELLS
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[5] 2-STAGE ARSENIC CRACKING SOURCE WITH INTEGRAL GETTER PUMP FOR MBE GROWTH
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[6] THE EFFECT OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (03): : 167 - 173
[7] LAMBERT M, 1987, 4TH EUR WORKSH MOL B
[8] SILICON DOPING EFFECTS IN REACTIVE PLASMA-ETCHING
LEE, YH
CHEN, MM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 468 - 475
[9] MORPHOLOGICAL-STUDIES OF OVAL DEFECTS IN GAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
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SHIH, HD
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 47 - 49
[10] A MASS-SPECTROMETRIC STUDY OF ASH3 AND PH3 GAS SOURCES FOR MOLECULAR-BEAM EPITAXY
PANISH, MB
HAMM, RA
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 78 (03) : 445 - 452

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