SILICON DOPING EFFECTS IN REACTIVE PLASMA-ETCHING

[1] EFFECTS OF DOPING ON POLYSILICON ETCH RATE IN A FLUORINE-CONTAINING PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2221 - 2225

[2] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[4] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[5] PHOTOEMISSION STUDIES OF 2P CORE LEVELS OF PURE AND HEAVILY DOPED SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 88 (01): : 135 - 143

[6] EPHRATH L, 1982, VLSI SCI TECHNOLOGY, P108

[7] REACTIVE ION ETCHING FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1315 - 1319

[8] FAVEREAU D, 1985, PLASMA PROCESSING, P78

[9] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639

[10] Fraga S, 1971, ATOM DATA, V3, P323

[1] EFFECTS OF DOPING ON POLYSILICON ETCH RATE IN A FLUORINE-CONTAINING PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2221 - 2225

[2] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[4] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[5] PHOTOEMISSION STUDIES OF 2P CORE LEVELS OF PURE AND HEAVILY DOPED SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 88 (01): : 135 - 143

[6] EPHRATH L, 1982, VLSI SCI TECHNOLOGY, P108

[7] REACTIVE ION ETCHING FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1315 - 1319

[8] FAVEREAU D, 1985, PLASMA PROCESSING, P78

[9] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639

[10] Fraga S, 1971, ATOM DATA, V3, P323