EFFECTS OF DOPING ON POLYSILICON ETCH RATE IN A FLUORINE-CONTAINING PLASMA

被引：24

作者：

BALDI, L

BEARDO, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2221 / 2225

页数：5

共 10 条

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