REDUCED CARBON ACCEPTOR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING DIMER ARSENIC

被引：27

作者：

GARCIA, JC ^{[1
]}

BEYE, AC ^{[1
]}

CONTOUR, JP ^{[1
]}

NEU, G ^{[1
]}

MASSIES, J ^{[1
]}

BARSKI, A ^{[1
]}

机构：

[1] INSTRUMENT SA RIBER,F-92503 RUEIL MALMAISON,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 19期

关键词：

D O I：

10.1063/1.99092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1596 / 1598

页数：3

共 17 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
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[2] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS
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[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803
[3] AN OPTICAL CHARACTERIZATION OF DEFECT LEVELS INDUCED BY MBE GROWTH OF GAAS
CONTOUR, JP
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LEROUX, M
CHAIX, C
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ETIENNE, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 811 - 815
[4] CHARACTERIZATION OF HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 507 - 510
[5] THE EFFECT OF ARSENIC SPECIES ON THE MINORITY-CARRIER PROPERTIES OF (ALGA) AS-GAAS DOUBLE HETEROSTRUCTURES GROWN BY MBE
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[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 129 - 134
[6] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES
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[J]. SURFACE SCIENCE, 1977, 64 (01) : 293 - 304
[7] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE
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[J]. SURFACE SCIENCE, 1975, 50 (02) : 434 - 450
[8] DIMER ARSENIC SOURCE USING A HIGH-EFFICIENCY CATALYTIC CRACKING OVEN FOR MOLECULAR-BEAM EPITAXY
GARCIA, JC
BARSKI, A
CONTOUR, JP
MASSIES, J
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 593 - 595
[9] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS
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MENDEZ, EE
OSTERLING, L
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6982 - 6988
[10] MOLECULAR-BEAM EPITAXY OF IN0.53GA0.47AS AND INP ON INP BY USING CRACKER CELLS AND GAS CELLS
HUET, D
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DUFRESNE, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 823 - 829

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