SCANNING-TUNNELING-MICROSCOPY STUDY OF THE METAL-INDUCED SI(111)3X1 RECONSTRUCTION - EVIDENCE FOR DIMERIZED CHAIN FORMATION

被引:34
作者
CARPINELLI, JM
WEITERING, HH
机构
[1] UNIV TENNESSEE, DEPT PHYS & ASTRON, KNOXVILLE, TN 37996 USA
[2] OAK RIDGE NATL LAB, DIV SOLID STATE, OAK RIDGE, TN 37831 USA
关键词
ADATOMS; METAL-SEMICONDUCTOR INTERFACES; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SCANNING TUNNELING SPECTROSCOPY; SILICON; SILVER; SURFACE ELECTRONIC PHENOMENA; SURFACE RELAXATION AND RECONSTRUCTION;
D O I
10.1016/0039-6028(95)00100-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Scanning tunneling microscope (STM) images of the Si(111)3 X 1-Ag interface exhibit a strong bias dependence. A clear dimerization of the Si surface atoms is evident from the 1 V empty state images. The imaged electronic states exhibit either a 3 X 1 or a 6 X 1 periodicity. These results are interpreted on the basis of the recently proposed dimerized chain or conjugated chain model. It is demonstrated that the dimer orientation in every second dimer row of the 3 X 1 reconstruction can be changed using a STM tip, thereby producing a 6 X 1 symmetry. This phenomenon could be similar to the well-known soliton excitations in doped conjugated polymers.
引用
收藏
页码:1015 / 1021
页数:7
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