ENGINEERING SUB-50 NM QUANTUM EFFECT DEVICES AND SINGLE-ELECTRON TRANSISTORS USING ELECTRON-BEAM LITHOGRAPHY

Fabrication and characteristics of various nanoscale quantum and single-electron devices are described. Using high-resolution electron beam lithography and double layer PMMA resist, we have successfully fabricated a 20 nm split-gate device, a novel 50 nm single barrier single-electron transistor, and a 75 nm triple barrier tunneling device. Effects of beam dose and the number of writing passes on the actual lithography pattern were investigated for various device gate geometries. Pronounced quantum and single-electron effects have been observed in these devices.