MOSFET THERMAL NOISE MODELING FOR ANALOG INTEGRATED-CIRCUITS

被引：76

作者：

WANG, B ^{[1
]}

HELLUMS, JR ^{[1
]}

SODINI, CG ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,SEMICOND RES LABS,DALLAS,TX 75265

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1994年 / 29卷 / 07期

关键词：

Charge carriers - Electric field effects - Electric network parameters - Gates (transistor) - Linear integrated circuits - MOSFET devices - Semiconductor device models;

D O I：

10.1109/4.303722

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of device geometry, oxide thickness and bias condition on the thermal noise of MOSFET's are investigated. The experimental results show that the conventional MOSFET thermal noise models do not accurately predict the thermal noise of MOSFET's. A model that is capable of predicting the thermal noise of both long and short channel devices in both the triode and saturation regions is presented. This model, which can be easily implemented into existing simulators such as SPICE, has been verified by a wide variety of measurements.

引用

页码：833 / 835

页数：3

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