学术探索
学术期刊
新闻热点
数据分析
智能评审

EFFECTS OF FIXED BULK CHARGE ON THERMAL NOISE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：43
作者：
SAH, CT
WU, SY
HIELSCHER, FH
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 04期
关键词：
D O I：
10.1109/T-ED.1966.15703
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：410 / +
页数：1
相关论文
共 7 条
[1]   THEORY OF NOISE IN METAL OXIDE SEMICONDUCTOR DEVICES [J].
JORDAN, AG ;
JORDAN, NA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :148-+
[2]   THEORY + EXPERIMENTS ON 1/F SURFACE NOISE OF MOS INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].
SAH, CT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (11) :534-&
[3]   EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].
SAH, CT ;
PAO, HC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) :393-+
[4]   CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].
SAH, CT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :324-+
[5]   THEORY OF LOW-FREQUENCY GENERATION NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS [J].
SAH, CT .
PROCEEDINGS OF THE IEEE, 1964, 52 (07) :795-+
[6]  
VANDERZIEL A, 1962, P IRE, V50, P1808
[7]  
VANDERZIEL A, 1964, PRIVATE COMMUNICATIO
1