IMPORTANCE AND CONSIDERATIONS OF HIGH-EFFICIENCY SOLAR-CELLS

被引：4

作者：

ROHATGI, A

FEDERMANN, EF

机构：

来源：

SOLAR CELLS | 1984年 / 12卷 / 1-2期

关键词：

D O I：

10.1016/0379-6787(84)90075-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：177 / 183

页数：7

共 13 条

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[2]

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[3]

Davis J. R., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P569

[4] A PHYSICAL MODEL FOR THE DEPENDENCE OF CARRIER LIFETIME ON DOPING DENSITY IN NONDEGENERATE SILICON [J].

FOSSUM, JG ;

LEE, DS .

SOLID-STATE ELECTRONICS, 1982, 25 (08) :741-747

[5]

ILES PA, 1983, COMMUNICATION OCT

[6] HIGH-EFFICIENCY P+-N-N+ BACK-SURFACE FIELD SILICON SOLAR-CELLS WITH VERY LARGE SHORT-CIRCUIT CURRENT DENSITIES [J].

NIJS, J ;

VANMEERBERGEN, J ;

DHOORE, F ;

MERTENS, R ;

VANOVERSTRAETEN, R .

SOLAR CELLS, 1982, 7 (03) :331-336

[7]

ROHATGI A, 1983, UNPUB 17TH PHOT SPEC

[8]

SAH CT, 1983, 1ST US DEP EN JET PR

[9]

SPITZER M, UNPUB 17TH PHOT SPEC

[10]

SPITZER M, COMMUNICATION

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