STUDIES OF INTERDIFFUSION IN GEMSIN STRAINED LAYER SUPERLATTICES

被引：10

作者：

CHANG, SJ ^{[1
]}

ARBET, V ^{[1
]}

WANG, KL ^{[1
]}

BOWMAN, RC ^{[1
]}

ADAMS, PM ^{[1
]}

NAYAK, D ^{[1
]}

WOO, JCS ^{[1
]}

机构：

[1] AEROSPACE CORP,LOS ANGELES,CA 90009

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 02期

关键词：

interdiffusion; Raman; Superlattice; x-ray;

D O I：

10.1007/BF02651736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the results on the characterization and interdiffusion behavior of Ge m Si n strained layer superlattices (SLS's) composed of alternating monolayers of pure Ge and pure Si. Such Ge m Si n SLS's were grown on top of thick relaxed Ge y Si1-y buffer layers so as to symmetrize the strain distribution and to maintain the pseudomorphic growth of the superlattices. Samples with different superlattice periodicities (i.e. d = dGe + dSi and different layer thickness ratios (i.e. dGe:dSi were prepared for comparison. Raman scattering spectroscopy and x-ray diffraction were used to characterize these samples. Initial results on thermal stability of these Ge m Si n SLS's are also reported © 1990 The Mineral,Metal & Materials Society,Inc.

引用

页码：125 / 129

页数：5

共 27 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].