ROOM-TEMPERATURE PHOTOLUMINESCENCE FROM ETCHED SILICON SURFACES - THE EFFECTS OF CHEMICAL PRETREATMENTS AND GASEOUS AMBIENTS

被引：12

作者：

CANHAM, LT

机构：

[1] King's Coll London, London, Engl, King's Coll London, London, Engl

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1986年 / 47卷 / 04期

关键词：

D O I：

10.1016/0022-3697(86)90026-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：363 / 373

页数：11

共 55 条

[1] STAIN FILMS ON SILICON [J].

ARCHER, RJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :104-110

[2] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J].

ASPNES, DE .

SURFACE SCIENCE, 1983, 132 (1-3) :406-421

[3] GAAS SURFACE OXIDATION-RELATED PHOTO-LUMINESCENCE TRANSIENTS [J].

BOOYENS, H ;

BASSON, JH ;

LEITCH, AWR ;

LEE, ME ;

STANDER, CM .

SURFACE SCIENCE, 1983, 130 (02) :259-268

[4]

Boyd I. W., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P59

[5] LASER-ENHANCED OXIDATION OF SI [J].

BOYD, IW .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :728-730

[6] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J].

BUCK, TM ;

MCKIM, FS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) :709-714

[7] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].

CASEY, HC ;

BUEHLER, E .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249

[8]

CHANG CC, 1970, SURFACE SCI, V23, P293

[9]

CLAUSSEN BH, 1964, J ELECTROCHEM SOC, V3, P646

[10] CIRCUITS TO ELIMINATE THE VOLTAGE SPIKES CAUSED BY COSMIC-RAYS IN GERMANIUM PIN-DIODE INFRARED DETECTORS [J].

COLLINS, AT ;

JEFFRIES, T .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1982, 15 (07) :712-716

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