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ROOM-TEMPERATURE PHOTOLUMINESCENCE FROM ETCHED SILICON SURFACES - THE EFFECTS OF CHEMICAL PRETREATMENTS AND GASEOUS AMBIENTS

被引：12
作者：
CANHAM, LT
机构：
[1] King's Coll London, London, Engl, King's Coll London, London, Engl
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1986年 / 47卷 / 04期
关键词：
D O I：
10.1016/0022-3697(86)90026-0
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
55
引用
收藏
页码：363 / 373
页数：11
相关论文
共 55 条
[41]   PHOTO-LUMINESCENCE OBSERVATION OF SWIRL DEFECTS AND GETTERING EFFECTS IN SILICON AT ROOM-TEMPERATURE [J].
NAKASHIMA, H ;
SHIRAKI, Y .
APPLIED PHYSICS LETTERS, 1978, 33 (03) :257-258
[42]   PHOTO-LUMINESCENCE TOPOGRAPHIC OBSERVATION OF DEFECTS IN SILICON-CRYSTALS [J].
NAKASHIMA, H ;
SHIRAKI, Y .
APPLIED PHYSICS LETTERS, 1978, 33 (06) :545-546
[43]   A NEW PHOTO-LUMINESCENCE METHOD OF CHARACTERIZING THE IN-DEPTH PROFILE OF THERMALLY INDUCED DEFECTS IN CZ-SI [J].
NAKAYAMA, H ;
KATSURA, J ;
NISHINO, T ;
HAMAKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :127-134
[44]   LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].
PANKOVE, JI ;
BERKEYHEISER, JE .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706
[45]  
RAIDER SI, 1975, J ELECTROCHEM SOC, V119, P772
[46]   EXAMINATION OF CHEMICAL STAINING OF SILICON [J].
SCHIMMEL, DG ;
ELKIND, MJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) :152-155
[47]   TEMPERATURE-DEPENDENCE OF RADIATIVE RECOMBINATION COEFFICIENT IN SILICON [J].
SCHLANGENOTTO, H ;
MAEDER, H ;
GERLACH, W .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 21 (01) :357-367
[48]   MEASUREMENTS OF THE RECOMBINATION VELOCITY AT GERMANIUM SURFACES [J].
STEVENSON, DT ;
KEYES, RJ .
PHYSICA, 1954, 20 (11) :1041-1046
[49]   INSITU MEASUREMENTS OF PHOTO-LUMINESCENCE INTENSITIES FROM CLEAVED (110) SURFACES OF N-TYPE INP IN A VACUUM AND GAS AMBIENTS [J].
SUZUKI, T ;
OGAWA, M .
APPLIED PHYSICS LETTERS, 1979, 34 (07) :447-449
[50]   DEGRADATION OF PHOTOLUMINESCENCE INTENSITY CAUSED BY EXCITATION-ENHANCED OXIDATION OF GAAS SURFACES [J].
SUZUKI, T ;
OGAWA, M .
APPLIED PHYSICS LETTERS, 1977, 31 (07) :473-475
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