PHOTO-LUMINESCENCE TOPOGRAPHIC OBSERVATION OF DEFECTS IN SILICON-CRYSTALS

被引：13

作者：

NAKASHIMA, H

SHIRAKI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 06期

关键词：

D O I：

10.1063/1.90439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：545 / 546

页数：2

共 12 条

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HEINKE, W ;

QUEISSER, HJ .

PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1082-1084

[2] DEGRADATION SOURCES IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J].

ITO, R ;

NAKASHIMA, H ;

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NAKADA, O .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :551-556

[3] SIMPLE METHOD FOR OBTAINING LUMINESCENT PATTERN OF DOUBLE HETEROSTRUCTURE CRYSTALS [J].

ITO, R ;

NAKASHIMA, H ;

NAKADA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) :1272-1274

[4] DEGRADATION CHARACTERISTICS OF CW OPTICALLY PUMPED ALXGA1-XAS HETEROSTRUCTURE LASERS [J].

JOHNSTON, WD ;

MILLER, BI .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :192-194

[5] X-RAY TOPOGRAPHIC STUDY OF DARK-SPOT DEFECTS IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE WAFERS [J].

KISHINO, S ;

NAKASHIMA, H ;

ITO, R ;

NAKADA, O .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :207-209

[6]

NAKASHIMA H, 1978, APPL PHYS LETT, V33, pR30

[7] GROWTH OF LATTICE DEFECTS IN SILICON DURING OXIDATION [J].

QUEISSER, HJ ;

VANLOON, PGG .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :3066-&

[8] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J].

SECCODARAGONA, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) :948-+

[9] GENERATION OF DISLOCATIONS INDUCED BY CHEMICAL VAPOR-DEPOSITED SI3N4 FILMS ON SILICON [J].

TAMURA, M ;

SUNAMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (08) :1097-&

[10] SURFACE DAMAGE AND COPPER PRECIPITATION IN SILICON [J].

THOMAS, DJD .

PHYSICA STATUS SOLIDI, 1963, 3 (12) :2261-2273

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