DEGRADATION SOURCES IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS

被引：39

作者：

ITO, R ^{[1
]}

NAKASHIMA, H ^{[1
]}

KISHINO, S ^{[1
]}

NAKADA, O ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：551 / 556

页数：6

共 18 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
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[2] AIKI K, COMMUNICATION
[3] MEASUREMENT OF MINORITY-CARRIER LIFETIME DURING GRADUAL DEGRADATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS
CHINONE, N
ITO, R
NAKADA, O
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (01) : 81 - 84
[4] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K
DELOACH, BC
HAKKI, BW
HARTMAN, RL
DASARO, LA
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044
[5] GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS
ITO, R
NAKASHIMA, H
NAKADA, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (08) : 1321 - 1322
[6] SIMPLE METHOD FOR OBTAINING LUMINESCENT PATTERN OF DOUBLE HETEROSTRUCTURE CRYSTALS
ITO, R
NAKASHIMA, H
NAKADA, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) : 1272 - 1274
[7] JOHNSON DW, 1973, APPL PHYS LETT, V23, P192
[8] OBSERVATION OF DARK-LINE DEGRADATION SITES IN ALGAAS-GAAS DH LASER MATERIAL BY ETCHING AND PHASE-CONTRAST MICROSCOPY
JOHNSTON, WD
CALLAHAN, WM
MILLER, BI
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 505 - 507
[9] MACROSCOPIC DETERIORATION OF FLUORESCENCE FROM ALCHIGA1-CHIAS-GAAS DH MATERIAL FOLLOWING MICROSCOPIC PHYSICAL DAMAGE
JOHNSTON, WD
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 494 - 496
[10] CONTINUOUS OPERATION OVER 2500 H OF DOUBLE HETEROSTRUCTURE LASER-DIODES WITH OUTPUT POWERS MORE THAN 80 MW
NAKADA, O
CHINONE, N
NAKAMURA, S
NAKASHIM.H
ITO, R
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) : 1485 - 1486

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