GENERATION OF DISLOCATIONS INDUCED BY CHEMICAL VAPOR-DEPOSITED SI3N4 FILMS ON SILICON

被引：74

作者：

TAMURA, M

SUNAMI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1972年 / 11卷 / 08期

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D O I：

10.1143/JJAP.11.1097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1097 / &

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