A NEW PHOTO-LUMINESCENCE METHOD OF CHARACTERIZING THE IN-DEPTH PROFILE OF THERMALLY INDUCED DEFECTS IN CZ-SI

被引：5

作者：

NAKAYAMA, H

KATSURA, J

NISHINO, T

HAMAKAWA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.7567/JJAPS.21S1.127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：127 / 134

页数：8

共 16 条

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