IR AND X-RAY STUDIES OF ION-BEAM-SYNTHESIZED ALUMINUM NITRIDE FILMS

被引：24

作者：

SINGH, A

LESSARD, RA

KNYSTAUTAS, EJ

机构：

来源：

THIN SOLID FILMS | 1986年 / 138卷 / 01期

关键词：

D O I：

10.1016/0040-6090(86)90217-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：79 / 86

页数：8

共 24 条

[1] FORMATION OF CHEMICAL COMPOUNDS BY ION-BOMBARDMENT OF THIN TRANSITION-METAL FILMS [J].

BELII, IM ;

KOMAROV, FF ;

TISHKOV, VS ;

YANKOVSKII, VM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01) :343-352

[2] PHASE-TRANSFORMATIONS AT BOMBARDMENT OF THIN-FILMS WITH IONS [J].

BYKOV, VN ;

TROYAN, VA ;

ZDOROVTSEVA, GG ;

KHAIMOVICH, VS .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (01) :53-61

[3] A SEMI QUANTITATIVE APPROACH TO ION IMPACT INDUCED SHOCK PROCESSES IN SOLIDS [J].

CARTER, G .

RADIATION EFFECTS LETTERS, 1980, 50 (3-6) :105-109

[4] SPIKE AND SHOCK PROCESSES IN HIGH-ENERGY DEPOSITION DENSITY ATOMIC COLLISION EVENTS IN SOLIDS [J].

CARTER, G .

RADIATION EFFECTS LETTERS, 1979, 43 (4-5) :193-199

[5] FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES [J].

DYLEWSKI, J ;

JOSHI, MC .

THIN SOLID FILMS, 1976, 35 (03) :327-336

[6] FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION [J].

EDELMAN, FL ;

KUZNETSOV, ON ;

LEZHEIKO, LV ;

LUBOPYTOVA, EV .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01) :13-15

[7] RUTHERFORD BACKSCATTERING ANALYSIS OF OXIDE LAYERS FORMED BY ION-IMPLANTATION INTO SINGLE-CRYSTAL SILICON [J].

GILL, SS ;

WILSON, IH .

THIN SOLID FILMS, 1978, 55 (03) :435-448

[8] FRICTION AND WEAR OF ION-IMPLANTED METALS - REVIEW [J].

HARTLEY, NEW .

THIN SOLID FILMS, 1979, 64 (02) :177-190

[9] FORMATION OF COMPOUNDS BY METALLOID ION-IMPLANTATION IN IRON [J].

HOHMUTH, K ;

RAUSCHENBACH, B ;

KOLITSCH, A ;

RICHTER, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :249-257

[10]

HOHMUTH K, 1981, 1981 TAG MET TAG DRE, P136

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