A PSEUDOPOTENTIAL APPROACH TO MIXING ENTHALPIES OF (III-V)1-X(IV2)X

被引:7
作者
ITO, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1988年 / 27卷 / 10期
关键词
D O I
10.1143/JJAP.27.1916
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1916 / 1921
页数:6
相关论文
共 24 条
  • [1] ALFEROV ZI, 1982, SOV PHYS SEMICOND+, V16, P532
  • [2] PROPERTIES OF (GE2)X(GAAS)1-X ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY
    BANERJEE, I
    CHUNG, DW
    KROEMER, H
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 494 - 496
  • [3] GROWTH AND OPTICAL-PROPERTIES OF SINGLE-CRYSTAL METASTABLE (GAAS)1-XGEX ALLOYS
    BARNETT, SA
    RAY, MA
    LASTRAS, A
    KRAMER, B
    GREENE, JE
    RACCAH, PM
    ABELS, LL
    [J]. ELECTRONICS LETTERS, 1982, 18 (20) : 891 - 892
  • [4] GROWTH OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS
    CADIEN, KC
    ELTOUKHY, AH
    GREENE, JE
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 773 - 775
  • [5] PROPERTIES OF (GAAS)1-XGE2X AND (GASB)1-XGE2X - CONSEQUENCES OF A STOCHASTIC GROWTH-PROCESS
    DAVIS, LC
    HOLLOWAY, H
    [J]. PHYSICAL REVIEW B, 1987, 35 (06): : 2767 - 2780
  • [6] THE EFFECTS OF SHORT-RANGE AND LONG-RANGE ORDER ON THE ENERGY GAPS OF (GAAS)1-XGE2X AND (GASB)1-XGE2X
    DAVIS, LC
    HOLLOWAY, H
    [J]. SOLID STATE COMMUNICATIONS, 1987, 64 (01) : 121 - 124
  • [7] GIESECKE G, 1966, SEMICONDUCT SEMIMET, V2, P73
  • [8] A REVIEW OF RECENT RESEARCH ON THE GROWTH AND PHYSICAL-PROPERTIES OF SINGLE-CRYSTAL METASTABLE ELEMENTAL AND ALLOY SEMICONDUCTORS
    GREENE, JE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 229 - 237
  • [9] ROLE OF CORRELATIONS IN (GASB)1-XGE2X ALLOYS
    GU, BL
    NEWMAN, KE
    FEDDERS, PA
    [J]. PHYSICAL REVIEW B, 1987, 35 (17): : 9135 - 9148
  • [10] NEW METHOD FOR ELECTRONIC STRUCTURE OF METALS
    HEINE, V
    ABARENKOV, I
    [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (99): : 451 - &