PROPERTIES OF (GE2)X(GAAS)1-X ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY

被引：40

作者：

BANERJEE, I ^{[1
]}

CHUNG, DW ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT CHEM & NUCL ENGN,SANTA BARBARA,CA 93106

来源：

关键词：

D O I：

10.1063/1.95569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：494 / 496

页数：3

共 10 条

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[6] GROWTH OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS
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[9] MOLECULAR-BEAM EPITAXY OF GE AND GA1-XALXAS ULTRA THIN-FILM SUPER-LATTICES
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[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) : 172 - 178
[10] UMANSKI E, 1982, SOV PHYS SEMICOND, V16, P537