ION MIXING DURING FILM DEPOSITION - GROWTH OF METASTABLE SEMICONDUCTING AND METALLIC ALLOYS

被引：3

作者：

CADIEN, KC ^{[1
]}

RAY, MA ^{[1
]}

SHIN, SM ^{[1
]}

RIGSBEE, JM ^{[1
]}

BARNETT, SA ^{[1
]}

GREENE, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：370 / 371

页数：2

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[1] GROWTH AND THERMAL-STABILITY OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS
CADIEN, KC
ELTOUKHY, AH
GREENE, JE
[J]. VACUUM, 1981, 31 (06) : 253 - 258
[2] CADIEN KC, UNPUB APPL PHYS LETT
[3] DIFFUSION ENHANCEMENT DUE TO LOW-ENERGY ION-BOMBARDMENT DURING SPUTTER ETCHING AND DEPOSITION
ELTOUKHY, AH
GREENE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4444 - 4452
[4] EFFECT OF ION-BOMBARDMENT ON INITIAL-STAGES OF THIN-FILM GROWTH
MARINOV, M
[J]. THIN SOLID FILMS, 1977, 46 (03) : 267 - 274
[5] SHAH SI, J ELECTRON MATER
[6] CALCULATION OF REGULAR SOLUTION INTERACTION PARAMETERS IN SEMICONDUCTOR SOLID-SOLUTIONS
STRINGFELLOW, GB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1749 - 1750