DIRECT ENERGY-GAP OF AL1-XINXAS LATTICE MATCHED TO INP

被引：78

作者：

WAKEFIELD, B

HALLIWELL, MAG

KERR, T

ANDREWS, DA

DAVIES, GJ

WOOD, DR

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.94726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：341 / 343

页数：3

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共 14 条

[11] COMPOSITION DEPENDENCE OF THE BAND-GAPS OF IN1-XGAXAS1-YPY QUATERNARY SOLIDS LATTICE MATCHED ON INP SUBSTRATES [J].

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4033-4037

[13] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP [J].

OLEGO, D ;

CHANG, TY ;

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CARIDI, EA ;

PINCZUK, A .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :476-478

[14] AL0.48IN0.52AS-GA0.47IN0.53AS-AL0.48IN0.52AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65-MU-M [J].

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3861-3864