ELECTRON-BEAM EXPOSURE (EBE) AND EPITAXY OF GAAS FILMS ON CAF2/SI STRUCTURES

被引：47

作者：

LEE, HC

ASANO, T

ISHIWARA, H

FURUKAWA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.1616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1616 / 1625

页数：10

共 36 条

[1]

AONO M, 1986, 18TH INT C SOL STAT, P411

[2] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS [J].

ASANO, T ;

ISHIWARA, H ;

LEE, HC ;

TSUTSUI, K ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L139-L141

[3] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE [J].

ASANO, T ;

ISHIWARA, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3566-3570

[4] HETEROEPITAXIAL GROWTH OF GROUP-IIA-FLUORIDE FILMS ON SI SUBSTRATES [J].

ASANO, T ;

ISHIWARA, H ;

KAIFU, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1474-1481

[5]

Castaing R, 1960, ADV ELECTRONICS ELEC, V13, P317, DOI [DOI 10.1016/S0065-2539(08)60212-7, 10.1016/S0065-2539(08)60212-7]

[6] EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE ON CLEAVED AND POLISHED (111) CALCIUM FLUORIDE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :782-&

[7] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2780-&

[8]

FATHAUER RW, 1986, MATER RES SOC S P, V54, P313

[9]

ISHIWARA H, 1987, IN PRESS 2ND INT S S

[10]

ISHIWARA H, 1986, MAT RES SOC S P, V53, P129

← 1 2 3 4 →