CHARACTERIZATION OF FUNDAMENTAL PARAMETERS OF A SEMICONDUCTOR-LASER WITH AN INJECTED OPTICAL PROBE

被引：12

作者：

LIU, JM ^{[1
]}

SIMPSON, TB ^{[1
]}

机构：

[1] JAYCOR,SAN DIEGO,CA 92186

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 04期

关键词：

D O I：

10.1109/68.212671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple technique using a direct optical probe is demonstrated for parasitic-free characterization of many intrinsic laser parameters, including the relaxation resonance frequency, the relaxation rate, the differential and nonlinear gain parameters, the linewidth enhancement factor, and the carrier and photon lifetimes. It consists of a single experimental setup and is broadly applicable to semiconductor lasers of different wavelengths and different dynamic bandwidths.

引用

页码：380 / 382

页数：3

共 7 条

[1] THEORY AND EXPERIMENT OF THE PARASITIC-FREE FREQUENCY-RESPONSE MEASUREMENT TECHNIQUE USING FACET-PUMPED OPTICAL MODULATION IN SEMICONDUCTOR DIODE-LASERS [J].