THE CHARGED EXCITATIONS IN THIN-FILMS OF ALPHA-SEXITHIOPHENE WITHIN SEMITRANSPARENT FIELD-EFFECT DEVICES - INVESTIGATION BY OPTICAL SPECTROSCOPY OF FIELD-INDUCED CHARGE AND BY PHOTOIMPEDANCE SPECTROSCOPY

被引：35

作者：

HARRISON, MG ^{[1
]}

FRIEND, RH ^{[1
]}

GARNIER, F ^{[1
]}

YASSAR, A ^{[1
]}

机构：

[1] CNRS,MAT MOLEC LAB,F-94320 THIAIS,FRANCE

来源：

SYNTHETIC METALS | 1994年 / 67卷 / 1-3期

关键词：

FILMS; SEXITHIOPHENE; FIELD-EFFECT DEVICES; SPECTROSCOPY;

D O I：

10.1016/0379-6779(94)90044-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurements of optical absorption, photoimpedance and photovoltaic excitation spectra associated with field-induced (positive) charges present in semi-transparent metal-insulator-semiconductor (MIS) diodes, in which sexithiophene forms the semiconductor layer. We detect the presence of at least three types of charged excitations present under different conditions of bias voltage and device preparation. We assign them to radical cations, intramolecular dications and intermolecular pi-dimers. We discuss implications for the use of sexithiophene in thin-film transistors.

引用

页码：215 / 221

页数：7

共 25 条

[1] FIELD-EFFECT TRANSISTORS USING ALKYL SUBSTITUTED OLIGOTHIOPHENES [J].