ROLE OF SILICON AND OXYGEN IMPURITIES IN GALLIUM ANTIMONIDE GRAIN-BOUNDARY

被引：6

作者：

ROY, UN

BASU, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.342986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1379 / 1381

页数：3

共 8 条

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[7] ELECTRICAL AND OPTICAL CHARACTERIZATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE CADMIUM TELLURIDE [J].

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