SYMMETRICAL AND ASYMMETRICAL POTENTIAL BARRIERS OF GRAIN-BOUNDARIES IN P-TYPE GAP - DETERMINATION OF BARRIER HEIGHTS BY C-U MEASUREMENTS

被引：3

作者：

SIEGEL, W

KUHNEL, G

SCHNEIDER, HA

机构：

[1] Bergakademie Freiberg, Freiberg, East Ger, Bergakademie Freiberg, Freiberg, East Ger

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 97卷 / 02期

关键词：

D O I：

10.1002/pssa.2210970236

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：609 / 618

页数：10

共 16 条

[1]

Broniatowski A., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P119

[2] SCHOTTKY-BARRIER BEHAVIOR IN POLYCRYSTAL GAAS [J].

COHEN, MJ ;

PAUL, MD ;

MILLER, DL ;

WALDROP, JR ;

HARRIS, JS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :899-903

[3] GRAIN-BOUNDARIES IN SEMICONDUCTORS [J].

GROVENOR, CRM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (21) :4079-4119

[4] THE BEHAVIOR OF ZINC IN GAP SYNTHESIS BY THE SSD TECHNIQUE [J].

KOI, H ;

BUHRIG, E ;

HEIN, K ;

GEIDEL, B .

CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (12) :1501-1512

[5] SEMICONDUCTING PROPERTIES OF ZNO-GRAIN-BOUNDARY-ZNO JUNCTIONS IN CERAMIC VARISTORS [J].

LOU, LF .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :570-572

[6]

Pike G. E., 1983, ADV CERAM, V1, P53

[7] DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J].

PIKE, GE ;

SEAGER, CH .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3414-3422

[8] SEMICONDUCTOR GRAIN-BOUNDARY ADMITTANCE - THEORY [J].

PIKE, GE .

PHYSICAL REVIEW B, 1984, 30 (02) :795-802

[9]

SALERNO JP, 1983, DEFECTS SEMICONDUCTO, V2, P375

[10] GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS [J].

SEAGER, CH ;

PIKE, GE .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :709-711

← 1 2 →