SCHOTTKY-BARRIER BEHAVIOR IN POLYCRYSTAL GAAS

[1] CHU SS, 1978, 13TH P IEEE PHOT SPE

[2] SAHAI R, 1978, 13TH P IEEE PHOT SPE

[3] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3879 - 3889

[4] GRAIN BOUNDARY BARRIERS IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 88 (04): : 867 - 875

[5] POTENTIAL PROFILING ACROSS SEMICONDUCTOR JUNCTIONS BY AUGER-ELECTRON SPECTROSCOPY IN SCANNING ELECTRON-MICROSCOPE [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5214 - 5217

[6] WALDROP JR, 1973, J TEST EVAL, V1, P194, DOI 10.1520/JTE10003J

[7] 1979, OCT P PHOT ADV MAT R

[1] CHU SS, 1978, 13TH P IEEE PHOT SPE

[2] SAHAI R, 1978, 13TH P IEEE PHOT SPE

[3] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3879 - 3889

[4] GRAIN BOUNDARY BARRIERS IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 88 (04): : 867 - 875

[5] POTENTIAL PROFILING ACROSS SEMICONDUCTOR JUNCTIONS BY AUGER-ELECTRON SPECTROSCOPY IN SCANNING ELECTRON-MICROSCOPE [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5214 - 5217

[6] WALDROP JR, 1973, J TEST EVAL, V1, P194, DOI 10.1520/JTE10003J

[7] 1979, OCT P PHOT ADV MAT R