DIFFUSION OF SB IN (111) SILICON DURING N-2 HEAT-TREATMENT

被引:2
作者
KOOK, T
JACCODINE, RJ
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D O I
10.1149/1.2114003
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:989 / 990
页数:2
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[1]   DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].
ANTONIADIS, DA ;
MOSKOWITZ, I .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796
[2]   EFFECT OF THERMAL NITRIDATION PROCESSES ON BORON AND PHOSPHORUS DIFFUSION IN (100) SILICON [J].
FAHEY, P ;
DUTTON, RW ;
MOSLEHI, M .
APPLIED PHYSICS LETTERS, 1983, 43 (07) :683-685
[3]   NITRIDATION OF SILICON AND OXIDIZED-SILICON [J].
HAYAFUJI, Y ;
KAJIWARA, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2102-2108
[4]   EFFECT OF SI AND SIO2 THERMAL NITRIDATION ON IMPURITY DIFFUSION AND OXIDATION INDUCED STACKING-FAULT SIZE IN SI [J].
MIZUO, S ;
KUSAKA, T ;
SHINTANI, A ;
NANBA, M ;
HIGUCHI, H .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3860-3866