APPLICATION OF HYDROGENATED AMORPHOUS-SILICON IN CHARGE-COUPLED-DEVICES

被引：12

作者：

KISHIDA, S ^{[1
]}

NARUKE, Y ^{[1
]}

UCHIDA, Y ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90399-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1281 / 1288

页数：8

共 10 条

[1] AMORPHOUS-SILICON SILICON-OXYNITRIDE FIELD-EFFECT TRANSISTORS [J].

ISHIBASHI, K ;

MATSUMURA, M .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :454-456

[2] P-CHANNEL CHARGE-COUPLED DEVICES WITH RESISTIVE GATE STRUCTURE [J].

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SNOW, EH .

APPLIED PHYSICS LETTERS, 1972, 20 (12) :514-&

[3] AMORPHOUS-SILICON CHARGE-COUPLED-DEVICES [J].

KISHIDA, S ;

NARA, Y ;

KOBAYASHI, O ;

MATSUMURA, M .

APPLIED PHYSICS LETTERS, 1982, 41 (12) :1154-1156

[4] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].

LECOMBER, PG ;

SPEAR, WE ;

GHAITH, A .

ELECTRONICS LETTERS, 1979, 15 (06) :179-181

[5]

MATSUMURA M, 1983, 41TH DEV RES C IIIB

[6]

MATSUMURA M, 1982, IEEE ELECTRON DEVICE, V1, P182

[7]

NARUKE Y, UNPUB IEEE T ELECTRO

[8] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS [J].

SNELL, AJ ;

MACKENZIE, KD ;

SPEAR, WE ;

LECOMBER, PG ;

HUGHES, AJ .

APPLIED PHYSICS, 1981, 24 (04) :357-362

[9] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE [J].

TIEDJE, T ;

CEBULKA, JM ;

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ABELES, B .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1425-1428

[10]

Uchida Y., 1982, Japanese Journal of Applied Physics, Supplement, V21, P225

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