AMORPHOUS-SILICON CHARGE-COUPLED-DEVICES

被引：17

作者：

KISHIDA, S

NARA, Y

KOBAYASHI, O

MATSUMURA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 12期

关键词：

D O I：

10.1063/1.93417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1154 / 1156

页数：3

共 7 条

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[2]

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[4] AMORPHOUS-SILICON IMAGE SENSOR IC [J].

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ISHIBASHI, K .

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[5] LARGE AREA DEPOSITION OF AMORPHOUS-SILICON [J].

MATSUMURA, M ;

UCHIDA, Y .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :671-674

[6]

MATSUMURA M, 1981, 9TH P INT C AM LIQ S

[7] SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES [J].

WRONSKI, CR ;

CARLSON, DE ;

DANIEL, RE .

APPLIED PHYSICS LETTERS, 1976, 29 (09) :602-605

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