INFLUENCES OF THIN ACTIVE LAYER IN (GAAL)AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LIQUID-PHASE EPITAXY

被引：15

作者：

HAYAKAWA, T

MIYAUCHI, N

SUYAMA, T

YAMAMOTO, S

HAYASHI, H

YANO, S

HIJIKATA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 11期

关键词：

D O I：

10.1063/1.333866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3088 / 3095

页数：8

相关论文

共 28 条

[11] VERY LOW THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM-VPE
HERSEE, SD
BALDY, M
ASSENAT, P
DECREMOUX, B
DUCHEMIN, JP
[J]. ELECTRONICS LETTERS, 1982, 18 (20) : 870 - 871
[12] DYNAMIC BEHAVIOR OF A GAAS-ALGAAS MQW LASER DIODE
IWAMURA, H
SAKU, T
ISHIBASHI, T
OTSUKA, K
HORIKOSHI, Y
[J]. ELECTRONICS LETTERS, 1983, 19 (05) : 180 - 181
[13] KAJIMURA T, 1983, JPN J APPL PHYS S, V22, P325
[14] ISOTHERMAL LPE GROWTH OF THIN GRADED BAND-GAP ALXGA1-X AS LAYERS
KORDOS, P
PEARSON, GL
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6902 - 6906
[15] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
[16] ONE WATT CW VISIBLE SINGLE-QUANTUM-WELL LASERS
LINDSTROM, C
BURNHAM, RD
SCIFRES, DR
PAOLI, TL
STREIFER, W
[J]. ELECTRONICS LETTERS, 1983, 19 (03) : 80 - 81
[17] 1.3 MU-M LPE-GROWN AND VPE-GROWN IN GAASP EDGE-EMITTING LEDS
OLSEN, GH
HAWRYLO, FZ
CHANNIN, DJ
BOTEZ, D
ETTENBERG, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (10) : 2130 - 2134
[18] RAO EVK, 1983, I PHYSICS C SERIES, V65, P257
[19] CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5382 - 5386
[20] CHANNELED SUBSTRATE NONPLANAR LASER ANALYSIS .1. FORMULATION AND THE PLANO-CONVEX WAVE-GUIDE LASER
STREIFER, W
BURNHAM, RD
SCIFRES, DR
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 736 - 744