SURFACE-EMITTING GAALAS GAAS-LASER WITH ETCHED MIRRORS

被引：18

作者：

YANG, JJ

JANSEN, M

SERGANT, M

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 08期

关键词：

D O I：

10.1049/el:19860299

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：438 / 439

页数：2

共 6 条

[1]

CASEY HC, 1978, HETEROSTRUCTURE LA A, P100

[2] LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].

IGA, K ;

SODA, H ;

TERAKADO, T ;

SHIMIZU, S .

ELECTRONICS LETTERS, 1983, 19 (13) :457-458

[3] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS GAAS SURFACE EMITTING INJECTION-LASER [J].

IGA, K ;

ISHIKAWA, S ;

OHKOUCHI, S ;

NISHIMURA, T .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :348-350

[4] NEW 1.5 MU-M WAVELENGTH GAINASP INP DISTRIBUTED FEEDBACK LASER [J].

ITAYA, Y ;

MATSUOKA, T ;

NAKANO, Y ;

SUZUKI, Y ;

KUROIWA, K ;

IKEGAMI, T .

ELECTRONICS LETTERS, 1982, 18 (23) :1006-1008

[5] SURFACE-EMITTING GAINASP-INP LASER WITH LOW THRESHOLD CURRENT AND HIGH-EFFICIENCY [J].

LIAU, ZL ;

WALPOLE, JN .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :115-117

[6]

SPRINGTHORPE AJ, 1977, P IEDM WASHINGTON, P571

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