NEUTRAL STREAM EXTRACTION FROM ELECTRON-CYCLOTRON-RESONANCE PLASMA BY USING PARALLEL MAGNETIC-FIELD

被引:6
作者
JIN, Y
TSUCHIZAWA, T
MATSUO, S
机构
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 4A期
关键词
NEUTRAL STREAM; ECR ION STREAM; PARALLEL MAGNETIC FIELD; SI ETCHING; CHARGED PARTICLE; ECR PLASMA; CHARGE EXCHANGE REACTION; LOW-ENERGY;
D O I
10.1143/JJAP.34.L465
中图分类号
O59 [应用物理学];
学科分类号
摘要
A low-energy neutral stream is generated by charge exchange reactions between the accelerated ions in an electron cyclotron resonance plasma stream and the background molecules and atoms. This stream is extracted using a parallel magnetic field to eliminate charged particles. Etched Si profiles demonstrate that this neutral stream has high directionality.
引用
收藏
页码:L465 / L467
页数:3
相关论文
共 11 条
[1]   CHARGING OF PATTERN FEATURES DURING PLASMA-ETCHING [J].
ARNOLD, JC ;
SAWIN, HH .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (10) :5314-5317
[2]  
HARTOG EAD, 1990, APPL PHYS LETT, V57, P661
[3]   THE INFLUENCE OF SUBSTRATE TOPOGRAPHY ON ION-BOMBARDMENT IN PLASMA-ETCHING [J].
INGRAM, SG .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) :500-504
[4]   LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].
MATSUO, S ;
KIUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L210-L212
[5]  
MORIMOTO T, 1991, 13TH P S DRY PROC, P57
[6]   ION AND NEUTRAL TEMPERATURES IN ELECTRON-CYCLOTRON RESONANCE PLASMA REACTORS [J].
NAKANO, T ;
SADEGHI, N ;
GOTTSCHO, RA .
APPLIED PHYSICS LETTERS, 1991, 58 (05) :458-460
[7]  
ONO T, 1986, J VAC SCI TECHNOL B, V4, P696, DOI 10.1116/1.583599
[8]   VERY HIGH-CURRENT ECR ION-SOURCE [J].
SHIMADA, M ;
WATANABE, I ;
TORII, Y .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4) :242-245
[9]   BEHAVIOR OF REACTION-PRODUCTS OF POLY-SI IN ELECTRON-CYCLOTRON RESONANCE ION STREAM ETCHING AND ITS APPLICATION TO STABLE AND HIGH-SELECTIVITY ETCHING [J].
TAKAHASHI, C ;
MATSUO, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (07) :2272-2276
[10]   A GENERAL CHARACTERIZATION AND SIMULATION METHOD FOR DEPOSITION AND ETCHING TECHNOLOGY [J].
TAZAWA, S ;
MATSUO, S ;
SAITO, K .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1992, 5 (01) :27-33