AN INFRARED-ABSORPTION STUDY OF LTCVD SILICON DIOXIDE

被引：21

作者：

PAVELESCU, C ^{[1
]}

COBIANU, C ^{[1
]}

VANCU, A ^{[1
]}

机构：

[1] IFTM,R-76900 MAGURELE,ROMANIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 04期

关键词：

D O I：

10.1149/1.2119872

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：975 / 977

页数：3

共 11 条

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[2]

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[3]

COBIANU C, 1982, EL SOC EXT ABSTR MAY

[4] THICKNESS MEASUREMENTS OF SILICON DIOXIDE FILMS ON SILICON BY INFRARED ABSORPTION TECHNIQUES [J].

DIAL, JE ;

GONG, RE ;

FORDEMWALT, JN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :326-+

[5]

KNIGHTS JC, 1978, PHILOS MAG B, V37, P469

[6]

PASCAL P, 1965, NOUVEAU TRAITE CHIM, V8, P328

[7]

POTTS WJ, 1963, CHEMICAL INFRARED SP, V1, P165

[8]

STRATER K, 1968, RCA REV, V29, P618

[9]

TAFT EA, 1979, J ELECTROCHEM SOC, V126, P1782

[10] REVIEW OF INFRARED SPECTROSCOPIC STUDIES OF VAPOR-DEPOSITED DIELECTRIC GLASS-FILMS ON SILICON [J].

WONG, J .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) :113-160

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