A REASSESSMENT OF ELECTRON-ESCAPE DEPTHS IN SILICON AND THERMALLY GROWN SILICON DIOXIDE THIN-FILMS

被引：179

作者：

HOCHELLA, MF ^{[1
]}

CARIM, AH ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

SURFACE SCIENCE | 1988年 / 197卷 / 03期

关键词：

D O I：

10.1016/0039-6028(88)90625-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：L260 / L268

页数：9

相关论文

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