INFLUENCE OF HEAT-TREATMENT ON MORPHOLOGICAL AND ELECTRICAL-PROPERTIES OF GAAS EPILAYER-SUBSTRATE INTERFACE

被引:14
作者
KAUFMANN, LMF
HEIME, K
BURCHARD, WG
机构
[1] TECH UNIV AACHEN,INST SEMICOND ELECTR,SONDER FORSCH BEREICH 56 FESTKORPERELEKTRONIK,D-5100 AACHEN,FED REP GER
[2] TECH UNIV AACHEN,GEMEINSCHAFTSLABOR ELEKTRONENMIKROSKOPIE,D-5100 AACHEN,FED REP GER
关键词
D O I
10.1016/0022-0248(76)90142-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:289 / 297
页数:9
相关论文
共 32 条
  • [31] SCHOTTKY-GATE BULK EFFECT DIGITAL DEVICES
    SUGETA, T
    YANAI, H
    SEKIDO, K
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (11): : 1629 - &
  • [32] NEW CONCEPT FOR MICROSTRIP-INTEGRATED GAAS SCHOTTKY-DIODES
    WORTMANN, A
    HEIME, K
    BENEKING, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 198 - 200