NEW CONCEPT FOR MICROSTRIP-INTEGRATED GAAS SCHOTTKY-DIODES

被引：2

作者：

WORTMANN, A ^{[1
]}

HEIME, K ^{[1
]}

BENEKING, H ^{[1
]}

机构：

[1] TECH UNIV AACHEN,INST SEMICOND ELECTR,TEMPLERGRABEN 55,5100 AACHEN,FED REP GER

来源：

关键词：

D O I：

10.1109/T-ED.1975.18104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：198 / 200

页数：3

共 8 条

[1] ALLEN RPG, 1973, P EUROP MICROWAVE C
[2] BENEKING H, 1972, Patent No. 23217972
[3] BENEKING H, 1971, C PAPER CORNELL C IT, P427
[4] MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &
[5] PERFORMANCE AND STABILITY OF SCHOTTKY-BARRIER MIXERS
DRAGONE, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1972, 51 (10): : 2169 - 2196
[6] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS
HEIME, K
KONIG, U
KOHN, E
WORTMANN, A
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 835 - &
[7] PILLER U, 1973, THESIS TH AACHEN
[8] WATSON H, 1969, MICROWAVE SEMICONDUC, P357