SINGLE-CRYSTAL SILICIDE SILICON INTERFACES - STRUCTURES AND BARRIER HEIGHTS

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[2] PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2 [J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7598 - 7602

[3] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862

[4] THE ATOMIC-STRUCTURE OF THE NISI2-(001)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (01): : 165 - 177

[5] THE SCATTERING OF ELECTRONS BY ATOMS AND CRYSTALS .1. A NEW THEORETICAL APPROACH [J]. ACTA CRYSTALLOGRAPHICA, 1957, 10 (10): : 609 - 619

[6] Gibson J. M., 1983, MATER RES SOC S P, V14, P395

[7] GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699

[8] HIGH RESOLUTION ELECTRON MICROSCOPY OF INTERFACES BETWEEN EPITAXIAL THIN FILMS AND SEMICONDUCTORS. [J]. Ultramicroscopy, 1984, 14 (1-2) : 1 - 10

[9] THEORY OF SURFACE STATES [J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &

[10] ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[2] PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2 [J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7598 - 7602

[3] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862

[4] THE ATOMIC-STRUCTURE OF THE NISI2-(001)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (01): : 165 - 177

[5] THE SCATTERING OF ELECTRONS BY ATOMS AND CRYSTALS .1. A NEW THEORETICAL APPROACH [J]. ACTA CRYSTALLOGRAPHICA, 1957, 10 (10): : 609 - 619

[6] Gibson J. M., 1983, MATER RES SOC S P, V14, P395

[7] GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699

[8] HIGH RESOLUTION ELECTRON MICROSCOPY OF INTERFACES BETWEEN EPITAXIAL THIN FILMS AND SEMICONDUCTORS. [J]. Ultramicroscopy, 1984, 14 (1-2) : 1 - 10

[9] THEORY OF SURFACE STATES [J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &

[10] ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183