ON THE DETERMINATION OF DEEP LEVEL CONCENTRATION PROFILES BY DLTS MEASUREMENTS

被引：11

作者：

MAASS, K ^{[1
]}

IRMSCHER, K ^{[1
]}

KLOSE, H ^{[1
]}

机构：

[1] ACAD SCI GDR,ZENTRUM WISSENSCH GERATEBAU,DDR-1199 BERLIN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 91卷 / 02期

关键词：

D O I：

10.1002/pssa.2210910238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：667 / 675

页数：9

共 10 条

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[2]

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KLOSE, H ;

MAASS, K .

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MAASS, K .

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[7]

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[8] DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN SEMICONDUCTORS [J].

LEFEVRE, H ;

SCHULZ, M .

APPLIED PHYSICS, 1977, 12 (01) :45-53

[9] ACCURATE DETERMINATION OF THE FREE CARRIER CAPTURE KINETICS OF DEEP TRAPS BY SPACE-CHARGE METHODS [J].

PONS, D .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3644-3657

[10] A SYSTEM FOR MEASURING DEEP-LEVEL SPATIAL CONCENTRATION DISTRIBUTIONS [J].

WANG, KL .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :449-453

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