ELECTRIC-FIELD ENHANCED ELECTRON-EMISSION FROM GOLD ACCEPTOR LEVEL AND A-CENTER IN SILICON

被引：27

作者：

IRMSCHER, K

KLOSE, H

MAASS, K

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 75卷 / 01期

关键词：

D O I：

10.1002/pssa.2210750146

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：K25 / K28

页数：4

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