CAPACITANCE METHOD APPLIED IN STUDYING DEFECTS IN HEAVILY DOPED SEMICONDUCTORS

被引：10

作者：

KOMAROV, BA

SOPRYAKOV, VI

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 01期

关键词：

D O I：

10.1002/pssa.2210660115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：139 / 147

页数：9

共 10 条

[1]

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[2]

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[3]

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[5]

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[8] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

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[9] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

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[10] RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON [J].

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