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ACTIVATION-ENERGIES OF THERMAL ANNEALING OF RADIATION-INDUCED DAMAGE IN N-CHANNEL AND P-CHANNEL OF CMOS INTEGRATED-CIRCUITS .2.

被引：5
作者：
DANCHENKO, V
FANG, PH
BRASHEARS, SS
机构：
[1] BOSTON COLL,DEPT PHYS,CHESTNUT HILL,MA 02167
[2] SPACE SCI SERV,LAUREL,MD 20810
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期
关键词：
D O I：
10.1109/TNS.1981.4335739
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：4407 / 4412
页数：6
相关论文
共 4 条
[1]   PREDICTION AND MEASUREMENT OF RADIATION-DAMAGE TO CMOS DEVICES ON BOARD SPACECRAFT [J].
CLIFF, RA ;
DANCHENKO, V ;
STASSINOPOULOS, EG ;
SING, M ;
BRUCKER, GJ ;
OHANIAN, RS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1781-1788
[2]   ACTIVATION-ENERGIES OF THERMAL ANNEALING OF RADIATION-INDUCED DAMAGE IN NORMAL-CHANNELS AND PARA-CHANNELS OF CMOS INTEGRATED-CIRCUITS [J].
DANCHENKO, V ;
STASSINOPOULOS, EG ;
FANG, PH ;
BRASHEARS, SS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1658-1664
[3]  
DANCHENKO V, UNPUBLISHED
[4]   PREDICTION AND MEASUREMENT RESULTS OF RADIATION-DAMAGE TO CMOS DEVICES ON BOARD SPACECRAFT [J].
STASSINOPOULOS, EG ;
DANCHENKO, V ;
CLIFF, RA ;
SING, M .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2289-2293
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