GROWTH OF HIGH-PURITY INGAAS LPE LAYERS AND THEIR CHARACTERIZATION

High-purity InGaAs LPE layers with an area of 16×18 mm2 were grown in a conventional leak-tight, oil-free LPE growth system. Carrier concentrations as low as 4.4×1014 atoms/cm3 and 300 K mobilites up to 11,300 cm2/ V -s were routinely obtained by simply baking the growth solution in a hydrogen atmosphere at 700°C for 40-60 h. Analysis techniques identified the predominant impurities as sulphur and carbon. The effect of these impurities upon the electrical characteristics of the grown layers has been pointed out. © 1990.